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SCT1000N170

ActiveSiC / GaN Wide-BandgapVDS 1700 VID 7 ARDS(on) 1 Ω

Silicon carbide Power MOSFET 1700 V, 1.0 Ω typ., 7 A in an HiP247 package

Manufacturer: STMicroelectronics
Datasheet: 11 pages · 301 KB
Website: www.st.com

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SCT1000N170 Key Specifications

Source: manufacturer datasheet

VDS	1700 V
ID	7 A
RDS(on)	1 Ω

Technical Documents

1 document

Datasheet

Datasheet - SCT1000N170 - Silicon carbide Power MOSFET 1700 V, 1.0 Ω typ., 7 A in an HiP247 package
11 pages301 KB BookmarkedST-SCT1000N170.pdf

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Same Series

SCT1000N170AGAutomotive-grade silicon carbide Power MOSFET 1700 V, 1.0 Ω typ., 7 A in an HiP247 package

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