“S” 共 4,711 个型号· 618 ms

排序相关度热度型号 A-Z
AEC-Q101 AEC-Q100 清除筛选
  • SC16C850车规级AEC-Q100

    2.5 V to 3.3 V UART, 5 Mbit/s (max.) with 128-byte FIFOs, infrared (IrDA), and 16 mode or 68 mode parallel bus interface

    厂商 恩智浦封装 TFBGA36工作温度 -40 ~ 85 °C封装 TFBGA36
    1 份文档
  • SGMCD1020Q车规级AEC-Q100国产

    厂商 圣邦微
    1 份文档
  • SGMCD1030Q车规级AEC-Q100国产

    厂商 圣邦微
    1 份文档
  • SCT011H75G3AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mΩ typ., 110 A in an H²PAK-7 package

    厂商 意法半导体VDS 750 VID 110 A
    1 份文档
  • SCT011HU75G3AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mΩ typ., 110 A in an HU3PAK package

    厂商 意法半导体VDS 750 VID 110 A
    1 份文档
  • SCT012H90G3AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 900 V, 12 mΩ typ., 110 A in an H²PAK-7 package

    厂商 意法半导体VDS 900 VID 110 A
    1 份文档
  • SCT012W90G3-4AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 900 V, 12 mΩ typ., 110 A in an HiP247-4 package

    厂商 意法半导体VDS 900 VID 110 A
    1 份文档
  • SCT012W90G3AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 900 V, 12 mΩ typ., 110 A in an HiP247 package

    厂商 意法半导体VDS 900 VID 110 A
    1 份文档
  • SCT014HU65G3AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 650 V, 13.5 mΩ typ., 110 A in an HU3PAK package

    厂商 意法半导体VDS 650 VID 110 A
    1 份文档
  • SCT015W120G3-4AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mΩ typ., 129 A in an HiP247-4 package

    厂商 意法半导体VDS 1200 VID 129 A
    1 份文档
  • SCT016H120G3AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mΩ typ., 112 A in an H²PAK-7 package

    厂商 意法半导体VDS 1200 VID 112 A
    1 份文档
  • SCT018H65G3AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 650 V, 20 mΩ typ., 55 A in an H²PAK-7 package

    厂商 意法半导体VDS 650 VID 55 A
    1 份文档
  • SCT018HU65G3AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 650 V, 21.5 mΩ typ., 60 A in an HU3PAK package

    厂商 意法半导体VDS 650 VID 60 A
    1 份文档
  • SCT018W65G3-4AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 650 V, 20 mΩ typ., 55 A in an HiP247-4 package

    厂商 意法半导体VDS 650 VID 55 A
    1 份文档
  • SCT018W65G3AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 650 V, 20 mΩ typ., 55 A in an HiP247 package

    厂商 意法半导体VDS 650 VID 55 A
    1 份文档
  • SCT019HU120G3AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mΩ typ., 90 A in an HU3PAK package

    厂商 意法半导体VDS 1200 VID 90 A
    1 份文档
  • SCT019W120G3-4AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mΩ typ., 90 A in an HiP247-4 package

    厂商 意法半导体VDS 1200 VID 90 A
    1 份文档
  • SCT020H120G3AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mΩ typ., 100 A in an H²PAK-7 package

    厂商 意法半导体VDS 1200 VID 100 A
    1 份文档
  • SCT020H75G3AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 750 V, 22 mΩ typ., 85 A in an H²PAK-7 package

    厂商 意法半导体VDS 750 VID 85 A
    1 份文档
  • SCT020HU120G3AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mΩ typ., 100 A in an HU3PAK package

    厂商 意法半导体VDS 1200 VID 100 A
    1 份文档