NXH240B120H3Q1PG

状态未知SiC / GaN 宽禁带器件VDS 1200 VID 80 A

Si/SiC Hybrid Module – EliteSiC, 3-channel, 1200 V IGBT + SiC Boost, 80 A IGBT and 20 A SiC Diode, Q1 Package

NXH240B120H3Q1PG 主要参数

来源：原厂数据手册

VDS	1200 V
ID	80 A

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暂未收录 NXH240B120H3Q1PG 的替代料信息。

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NXH240B120H3Q1NXH240B120H3Q1P