NXH600B100H4Q2F2S1G

量产SiC / GaN 宽禁带器件VDS 1000 VID 200 A

Si/SiC Hybrid Module – EliteSiC™, 3 Channel Flying Capacitor Boost 1000 V, 200 A IGBT, 1200 V, 60 A SiC Diode, Q2 Package

NXH600B100H4Q2F2S1G 主要参数

来源：原厂数据手册

VDS	1000 V
ID	200 A

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NXH600B100H4Q2F2S1