NXVF1270M3TG01

Name: NXVF1270M3TG01
Brand: onsemi

状态未知SiC / GaN 宽禁带器件

EliteSiC Power MOSFET Module

技术文档

1 份文档

NXVF1270M3TG01 - EliteSiC Power MOSFET Module
10 页333 KBRev. 22026-07-01ONSEMI-NXVF1270M3TG01.pdf

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暂未收录 NXVF1270M3TG01 的替代料信息。

价格与库存以渠道为准

NXVF6523M3TG81EliteSiC Power MOSFETvModule 650 V, 32 m H-Bridge
PCFFS08120AFSilicon Carbide (SiC) Schottky Diode – EliteSiC, 8 A, 1200 V, D1, Die
PCFFS15120AFSilicon Carbide (SiC) Schottky Diode – EliteSiC, 15 A, 1200 V, D1, Die
PCFFS20120AFSilicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 1200 V, D1, Die
PCFFS30120AFSilicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 1200 V, D1, Die
PCFFS40120AFSilicon Carbide (SiC) Schottky Diode – EliteSiC, 40 A, 1200 V, D1, Die
PCFFS50120AFSilicon Carbide (SiC) Schottky Diode – EliteSiC, 50 A, 1200 V, D1, Die
UF3C065030B3Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N‐Channel, D2PAK‐3, 650 V, 27 mohm
UF3C065030K3SSilicon Carbide (SiC) Cascode JFET - EliteSiC, Power N-Channel, TO247-3, 650 V, 27 mohm
UF3C065030K4SSilicon Carbide (SiC) Cascode JFET – EliteSiC, Power N‐Channel, TO247‐4, 650 V, 27 mohm
UF3C065030T3SSilicon Carbide (SiC) Cascode JFET – EliteSiC, Power N‐Channel, TO220‐3, 650 V, 27 mohm
UF3C065040B3Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N‐Channel, D2PAK‐3, 650 V, 42 mohm