NXH80B120H2Q0

Name: NXH80B120H2Q0
Brand: onsemi

量产SiC / GaN 宽禁带器件VDS 1200 VID 40 A

Si/SiC Hybrid Module – EliteSiC, Dual Boost, 1200 V, 40 A IGBT + 1200 V, 15 A SiC Diode, Q0 Package

NXH80B120H2Q0 主要参数

来源：原厂数据手册

VDS	1200 V
ID	40 A

1 份文档

0 个

暂未收录 NXH80B120H2Q0 的替代料信息。

价格与库存以渠道为准

NXH80B120L2Q0Q0 - Dual Boost Power Module
NXH80B120MNQ0Silicon Carbide (SiC) Module – EliteSiC, 80 mohm SiC M1 MOSFET, 1200 V + 20 A, 1200 V SiC Diode, Two Channel Full SiC Boost, Q0 Package

NVT2012N065M2MOSFET - SiC Power, Single N-Channel, T2PAK
NCP58920Enhanced Mode GaN Power Switch with Integrated Driver 650 V, 150 mΩ, 11 A, TQFN26
NCP58921Enhanced Mode GaN Power Switch with Integrated Driver 650 V, 50 mΩ, 30 A, TQFN26
NCP58922Enhanced Mode GaN Power Switch with Integrated Driver 650 V, 78 mΩ, 18 A, TQFN26
NCP58933ABTEnhancement Mode GaN Power Switch with Integrated Gate Clamp and Protection
NCP58934ABLEnhancement Mode GaN Power Switch with Integrated Gate Clamp and Protection 650 V, 27 mΩ, PDSO‐F9
NCP58935ABT.revP1
NDC10170ASilicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1700 V, D1, Die
NDC25170ASilicon Carbide (SiC) Schottky Diode – EliteSiC, 25 A, 1700 V, D1, Die
NDSH10120CSilicon Carbide (SiC) Schottky Diode - EliteSiC, 10 A, 1200 V, D3, TO-247-2L
NDSH10120C-F155Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10 A, 1200 V, D3, TO-247-2L
NDSH10170ASilicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1700 V, D1, TO-247-2L

NXH80B120H2Q0SGNXH80B120H2Q0SNG