NXH40B120MNQ1SNG

量产SiC / GaN 宽禁带器件VDS 1200 VID 40 ARDS(on) 40 mΩ

Silicon Carbide (SiC) Module – EliteSiC, 40 mohm SiC M1 MOSFET, 1200 V + 40 A, 1200 V SiC Diode, Three Channel Full SiC Boost, Q1 Package

NXH40B120MNQ1SNG 主要参数

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NXH40B120MNQ0Silicon Carbide (SiC) Module – EliteSiC, 40 mohm SiC M1 MOSFET, 1200 V + 40 A, 1200 V SiC Diode, Two Channel Full SiC Boost, Q0 Package

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