NXH011F120M3F2PT

UnknownSiC / GaN Wide-BandgapRDS(on) 11 mΩ

Silicon Carbide (SiC) Module – EliteSiC, 11 mohm, 1200 V, SiC M3S MOSFET, Full Bridge, F2 Package

Manufacturer
onsemi
Datasheet
14 pages · 793 KB · Rev. P8

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NXH011F120M3F2PT Key Specifications

Source: manufacturer datasheet
RDS(on)11 mΩ

Technical Documents

1 document

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