NXH020P120MNF1

ActiveSiC / GaN Wide-BandgapRDS(on) 20 mΩ

Silicon Carbide (SiC) Module – EliteSiC, 20 mohm SiC M1 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F1 Package

Manufacturer
onsemi
Datasheet
13 pages · 2.4 MB

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NXH020P120MNF1 Key Specifications

Source: manufacturer datasheet
RDS(on)20 mΩ

Technical Documents

1 document

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