NXH020P120MNF1
ActiveSiC / GaN Wide-BandgapRDS(on) 20 mΩ
Silicon Carbide (SiC) Module – EliteSiC, 20 mohm SiC M1 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F1 Package
- Manufacturer
- onsemi
- Datasheet
- 13 pages · 2.4 MB
- Website
- www.onsemi.com
NXH020P120MNF1 Key Specifications
Source: manufacturer datasheet| RDS(on) | 20 mΩ |
|---|
Technical Documents
1 documentDatasheet
Alternatives
0 partsNo alternatives listed for NXH020P120MNF1 yet.