NXH030S120M3F1

ActiveSiC / GaN Wide-BandgapRDS(on) 30 mΩ

Silicon Carbide (SiC) Module – 30 mohm, 1200 V, SiC M3S MOSFET, 6-PACK, F1 Package

Manufacturer
onsemi
Datasheet
12 pages · 720 KB

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NXH030S120M3F1 Key Specifications

Source: manufacturer datasheet
RDS(on)30 mΩ

Technical Documents

1 document

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