NXH040F120MNF1

ActiveSiC / GaN Wide-BandgapRDS(on) 40 mΩ

Silicon Carbide (SiC) Module – EliteSiC, 40 mohm SiC M1 MOSFET, 1200 V, 4-PACK Full Bridge Topology, F1 Package

Manufacturer
onsemi
Datasheet
13 pages · 1.6 MB

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NXH040F120MNF1 Key Specifications

Source: manufacturer datasheet
RDS(on)40 mΩ

Technical Documents

1 document

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