NXH40B120MNQ1SNG

ActiveSiC / GaN Wide-BandgapVDS 1200 VID 40 ARDS(on) 40 mΩ

Silicon Carbide (SiC) Module – EliteSiC, 40 mohm SiC M1 MOSFET, 1200 V + 40 A, 1200 V SiC Diode, Three Channel Full SiC Boost, Q1 Package

Manufacturer
onsemi
Datasheet
12 pages · 924 KB

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NXH40B120MNQ1SNG Key Specifications

Source: manufacturer datasheet
VDS1200 V
ID40 A
RDS(on)40 mΩ

Technical Documents

1 document

Datasheet

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