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NDSH10120C

ActiveSiC / GaN Wide-Bandgap封装 TO-247

Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10 A, 1200 V, D3, TO-247-2L

Manufacturer: onsemi
Package: TO-247
Datasheet: 4 pages · 191 KB
Website: www.onsemi.com

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NDSH10120C Key Specifications

Source: manufacturer datasheet

封装	TO-247

Technical Documents

1 document

Datasheet

NDSH10120C - Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10 A, 1200 V, D3, TO-247-2L
4 pages191 KBONSEMI-NDSH10120C.pdf

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Order codes / Aliases

NDSH10120