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NVT2012N065M3S

ActiveSiC / GaN Wide-BandgapRDS(on) 12.7 mΩ

Silicon Carbide (SiC) MOSFET – EliteSiC, 12.7 mohm, 650 V, M3S, T2PAK

Manufacturer: onsemi
Datasheet: 10 pages · 386 KB
Website: www.onsemi.com

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NVT2012N065M3S Key Specifications

Source: manufacturer datasheet

RDS(on)	12.7 mΩ

Technical Documents

1 document

Datasheet

NVT2012N065M3S - Silicon Carbide (SiC) MOSFET – EliteSiC, 12.7 mohm, 650 V, M3S, T2PAK
10 pages386 KBONSEMI-NVT2012N065M3S.pdf

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Order codes / Aliases

NVT2012N065M3