UF3C065080T3S

ActiveSiC / GaN Wide-BandgapRDS(on) 80 mΩ封装 TO220

Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N‐Channel, TO220‐3, 650 V, 80 mohm

Manufacturer
onsemi
Package
TO220
Datasheet
12 pages · 536 KB

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UF3C065080T3S Key Specifications

Source: manufacturer datasheet
RDS(on)80 mΩ
封装TO220

Technical Documents

1 document

Datasheet

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