UF3C065080B7S

ActiveSiC / GaN Wide-BandgapRDS(on) 85 mΩ封装 TO-263-7

Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N‐Channel, TO‐263‐7, 650 V, 85 mohm

Manufacturer
onsemi
Package
TO-263-7
Datasheet
11 pages · 550 KB

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UF3C065080B7S Key Specifications

Source: manufacturer datasheet
RDS(on)85 mΩ
封装TO-263-7

Technical Documents

1 document

Datasheet

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