UF3SC065040B7S

ActiveSiC / GaN Wide-BandgapRDS(on) 42 mΩ封装 TO-263-7

Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N‐Channel, TO‐263‐7, 650 V, 42 mohm

Manufacturer
onsemi
Package
TO-263-7
Datasheet
12 pages · 610 KB

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UF3SC065040B7S Key Specifications

Source: manufacturer datasheet
RDS(on)42 mΩ
封装TO-263-7

Technical Documents

1 document

Datasheet

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