Skip to main content

NDSH20120C

ActiveSiC / GaN Wide-Bandgap封装 TO-247

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 1200 V, D3, TO-247-2L

Manufacturer: onsemi
Package: TO-247
Datasheet: 6 pages · 296 KB
Website: www.onsemi.com

Wrong information or a copyright issue? Let us know

NDSH20120C Key Specifications

Source: manufacturer datasheet

封装	TO-247

Technical Documents

1 document

Datasheet

NDSH20120C - Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 1200 V, D3, TO-247-2L
6 pages296 KBONSEMI-NDSH20120C.pdf

Alternatives

0 parts

No alternatives listed for NDSH20120C yet.

Where to buy

Prices and stock are set by each distributor

Same Series

NDSH20120CDNSilicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 1200 V, D3, TO-247-3L
NDSH20120C-F155Silicon Carbide (SiC) Schottky Diode - EliteSiC, 20 A, 1200 V, D3, TO-247-2L

More from onsemi

NDSH10170ASilicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1700 V, D1, TO-247-2L
NDSH25170ASilicon Carbide (SiC) Schottky Diode – EliteSiC, 25 A, 1700 V, D1, TO-247-2L
NCP58920Enhanced Mode GaN Power Switch with Integrated Driver 650 V, 150 mΩ, 11 A, TQFN26
NDSH50120C-F155Silicon Carbide (SiC) Schottky Diode – EliteSiC, 50 A, 1200 V, D3, TO-247-2L
NVBG040N120SC1Silicon Carbide (SiC) MOSFET – 40 mohm, 1200 V, M1, D2PAK-7L
NVBG045N065SC1Silicon Carbide (SiC) MOSFET – 31 mohm, 650 V, M2, D2PAK-71
NVBG060N090SC1Silicon Carbide (SiC) MOSFET – 60 mohm, 900 V, M2, D2PAK-7L
NVH4L020N090SC1Silicon Carbide (SiC) MOSFET – 20 mohm, 900 V, M2, TO-247-4L
NVT2012N065M3SSilicon Carbide (SiC) MOSFET – EliteSiC, 12.7 mohm, 650 V, M3S, T2PAK
NVT2016N065M3SSilicon Carbide (SiC) MOSFET
NVT2032N065M3SSilicon Carbide (SiC) MOSFET – EliteSiC, 33 mohm, 650 V, M3S, T2PAK
UF3C065030K4SSilicon Carbide (SiC) Cascode JFET – EliteSiC, Power N‐Channel, TO247‐4, 650 V, 27 mohm

Order codes / Aliases

NDSH20120