NDSH20120CDN

ActiveSiC / GaN Wide-Bandgap封装 TO-247

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 1200 V, D3, TO-247-3L

Manufacturer
onsemi
Package
TO-247
Datasheet
6 pages · 286 KB

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NDSH20120CDN Key Specifications

Source: manufacturer datasheet
封装TO-247

Technical Documents

1 document

Datasheet

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