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UF3C120150B7S

ActiveSiC / GaN Wide-BandgapRDS(on) 150 mΩ封装 TO-263-7

Silicon Carbide (SiC) Cascode JFET - EliteSiC, Power N-Channel, TO-263-7, 1200 V, 150 mohm

Manufacturer: onsemi
Package: TO-263-7
Datasheet: 12 pages · 508 KB
Website: www.onsemi.com

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UF3C120150B7S Key Specifications

Source: manufacturer datasheet

RDS(on)	150 mΩ
封装	TO-263-7

Technical Documents

1 document

Datasheet

UF3C120150B7S - Silicon Carbide (SiC) Cascode JFET - EliteSiC, Power N-Channel, TO-263-7, 1200 V, 150 mohm
12 pages508 KBONSEMI-UF3C120150B7S.pdf

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Order codes / Aliases

UF3C120150B7