NVH4L015N065SC1

ActiveSiC / GaN Wide-BandgapRDS(on) 12 mΩ封装 TO-247

Silicon Carbide (SiC) MOSFET – 12 mohm, 650 V, M2, TO-247-4L

Manufacturer
onsemi
Package
TO-247
Datasheet
8 pages · 328 KB

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NVH4L015N065SC1 Key Specifications

Source: manufacturer datasheet
RDS(on)12 mΩ
封装TO-247

Technical Documents

1 document

Datasheet

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