NXH350N100H4Q2F2

ActiveSiC / GaN Wide-BandgapVDS 1000 VID 350 A

Si/SiC Hybrid Module – EliteSiC, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A SiC Diode, Q2 Package

Manufacturer
onsemi
Datasheet
18 pages · 1.9 MB

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NXH350N100H4Q2F2 Key Specifications

Source: manufacturer datasheet
VDS1000 V
ID350 A

Technical Documents

1 document

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