NXH600B100H4Q2F2
ActiveSiC / GaN Wide-BandgapVDS 1000 VID 200 A
Si/SiC Hybrid Module – EliteSiC, 3 Channel Symmetric Boost 1000 V, 200 A IGBT, 1200 V, 60 A SiC Diode, Q2 Package
- Manufacturer
- onsemi
- Datasheet
- 16 pages · 1.7 MB
- Website
- www.onsemi.com
NXH600B100H4Q2F2 Key Specifications
Source: manufacturer datasheet| VDS | 1000 V |
|---|---|
| ID | 200 A |
Technical Documents
1 documentDatasheet
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