Skip to main content

NXVF1270M3TG01

ActiveSiC / GaN Wide-Bandgap

EliteSiC Power MOSFET Module

Manufacturer: onsemi
Datasheet: 10 pages · 333 KB
Website: www.onsemi.com

Wrong information or a copyright issue? Let us know

Technical Documents

1 document

Datasheet

NXVF1270M3TG01 - EliteSiC Power MOSFET Module
10 pages333 KBONSEMI-NXVF1270M3TG01.pdf

Alternatives

0 parts

No alternatives listed for NXVF1270M3TG01 yet.

Where to buy

Prices and stock are set by each distributor

Same Series

NXVF1270M3TG81EliteSiC Power MOSFET Module

More from onsemi

NXVF6523M3TG81EliteSiC Power MOSFETvModule 650 V, 32 m H-Bridge
PCFFS08120AFSilicon Carbide (SiC) Schottky Diode – EliteSiC, 8 A, 1200 V, D1, Die
PCFFS15120AFSilicon Carbide (SiC) Schottky Diode – EliteSiC, 15 A, 1200 V, D1, Die
PCFFS20120AFSilicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 1200 V, D1, Die
PCFFS30120AFSilicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 1200 V, D1, Die
PCFFS40120AFSilicon Carbide (SiC) Schottky Diode – EliteSiC, 40 A, 1200 V, D1, Die
PCFFS50120AFSilicon Carbide (SiC) Schottky Diode – EliteSiC, 50 A, 1200 V, D1, Die
UF3C065030B3Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N‐Channel, D2PAK‐3, 650 V, 27 mohm
UF3C065030K3SSilicon Carbide (SiC) Cascode JFET - EliteSiC, Power N-Channel, TO247-3, 650 V, 27 mohm
UF3C065030K4SSilicon Carbide (SiC) Cascode JFET – EliteSiC, Power N‐Channel, TO247‐4, 650 V, 27 mohm
UF3C065030T3SSilicon Carbide (SiC) Cascode JFET – EliteSiC, Power N‐Channel, TO220‐3, 650 V, 27 mohm
UF3C065040B3Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N‐Channel, D2PAK‐3, 650 V, 42 mohm