NXH600B100H4Q2F2S1G

ActiveSiC / GaN Wide-BandgapVDS 1000 VID 200 A

Si/SiC Hybrid Module – EliteSiC™, 3 Channel Flying Capacitor Boost 1000 V, 200 A IGBT, 1200 V, 60 A SiC Diode, Q2 Package

Manufacturer
onsemi
Datasheet
14 pages · 1.6 MB

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NXH600B100H4Q2F2S1G Key Specifications

Source: manufacturer datasheet
VDS1000 V
ID200 A

Technical Documents

1 document

Datasheet

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