NXH80B120MNQ0

ActiveSiC / GaN Wide-BandgapVDS 1200 VID 20 ARDS(on) 80 mΩ

Silicon Carbide (SiC) Module – EliteSiC, 80 mohm SiC M1 MOSFET, 1200 V + 20 A, 1200 V SiC Diode, Two Channel Full SiC Boost, Q0 Package

Manufacturer
onsemi
Datasheet
13 pages · 682 KB

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NXH80B120MNQ0 Key Specifications

Source: manufacturer datasheet
VDS1200 V
ID20 A
RDS(on)80 mΩ

Technical Documents

1 document

Datasheet

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