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NXH030P120M3F1

ActiveSiC / GaN Wide-BandgapRDS(on) 30 mΩ

Silicon Carbide (SiC) Module – 30 mohm SiC M3S MOSFET, 1200 V, 2-PACK Half Bridge Topology, F1 Package

Manufacturer: onsemi
Datasheet: 12 pages · 909 KB
Website: www.onsemi.com

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NXH030P120M3F1 Key Specifications

Source: manufacturer datasheet

RDS(on)	30 mΩ

Technical Documents

1 document

Datasheet

NXH030P120M3F1 - Silicon Carbide (SiC) Module – 30 mohm SiC M3S MOSFET, 1200 V, 2-PACK Half Bridge Topology, F1 Package
12 pages909 KBONSEMI-NXH030P120M3F1.pdf

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Order codes / Aliases

NXH030P120M3F1PTG