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NXH011T120M3F2

ActiveSiC / GaN Wide-BandgapRDS(on) 11 mΩ

Silicon Carbide (SiC) Module – 11 mohm SiC M3S MOSFET, 1200 V, TNPC Topology, F2 Package

Manufacturer: onsemi
Datasheet: 18 pages · 1.3 MB
Website: www.onsemi.com

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NXH011T120M3F2 Key Specifications

Source: manufacturer datasheet

RDS(on)	11 mΩ

Technical Documents

1 document

Datasheet

NXH011T120M3F2 - Silicon Carbide (SiC) Module – 11 mohm SiC M3S MOSFET, 1200 V, TNPC Topology, F2 Package
18 pages1.3 MBONSEMI-NXH011T120M3F2.pdf

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Order codes / Aliases

NXH011T120M3F2PNXH011T120M3F2P1THGNXH011T120M3F2PTHG