NXH015F120M3F1

ActiveSiC / GaN Wide-BandgapRDS(on) 15 mΩ

Silicon Carbide (SiC) Module – 15 mohm SiC M3S MOSFET, 1200 V, 4-PACK Full Bridge Topology, F1 Package

Manufacturer
onsemi
Datasheet
12 pages · 824 KB

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NXH015F120M3F1 Key Specifications

Source: manufacturer datasheet
RDS(on)15 mΩ

Technical Documents

1 document

Datasheet

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