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NXH010P90MNF1

ActiveSiC / GaN Wide-BandgapRDS(on) 10 mΩ

Silicon Carbide (SiC) Module – EliteSiC, 10 mohm SiC M2 MOSFET, 900 V, 2-PACK Half Bridge Topology, F1 Package

Manufacturer: onsemi
Datasheet: 13 pages · 2.8 MB
Website: www.onsemi.com

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NXH010P90MNF1 Key Specifications

Source: manufacturer datasheet

RDS(on)	10 mΩ

Technical Documents

1 document

Datasheet

NXH010P90MNF1 - Silicon Carbide (SiC) Module – EliteSiC, 10 mohm SiC M2 MOSFET, 900 V, 2-PACK Half Bridge Topology, F1 Package
13 pages2.8 MBONSEMI-NXH010P90MNF1.pdf

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Order codes / Aliases

NXH010P90MNF1PGNXH010P90MNF1PTG