NXH007F120M3F2

ActiveSiC / GaN Wide-BandgapRDS(on) 7 mΩ

Silicon Carbide (SiC) Module – EliteSiC, 7 mohm, 1200 V, SiC M3S MOSFET, Full Bridge, F2 Package

Manufacturer
onsemi
Datasheet
13 pages · 707 KB

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NXH007F120M3F2 Key Specifications

Source: manufacturer datasheet
RDS(on)7 mΩ

Technical Documents

1 document

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