NXH008P120M3F1P

ActiveSiC / GaN Wide-BandgapRDS(on) 8 mΩ

Silicon Carbide (SiC) Module – 8 mohm SiC M3S MOSFET, 1200 V, 2‐PACK Half Bridge Topology, F1 Package

Manufacturer
onsemi
Datasheet
13 pages · 697 KB

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NXH008P120M3F1P Key Specifications

Source: manufacturer datasheet
RDS(on)8 mΩ

Technical Documents

1 document

Datasheet

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