NTLCC5D0N10GN1

ActiveSiC / GaN Wide-BandgapVDS 100 VID 146 ARDS(on) 3.8 mΩ

Enhancement Mode Gallium Nitride (GaN) HEMT 100 V, 3.8 mΩ, 146 A, PTFP‐N9

Manufacturer
onsemi
Datasheet
9 pages · 521 KB

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NTLCC5D0N10GN1 Key Specifications

Source: manufacturer datasheet
VDS100 V
ID146 A
RDS(on)3.8 mΩ

Technical Documents

1 document

Datasheet

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