NTLEF5D0N10GN1

ActiveSiC / GaN Wide-BandgapVDS 100 VID 147 ARDS(on) 3.8 mΩ

NTLEF5D0N10GN1 - Enhancement Mode Gallium Nitride (GaN) HEMT 100 V, 3.8 mOhm, 147 A, PDSO‐N8 5.0x6.0

Manufacturer
onsemi
Datasheet
6 pages · 514 KB

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NTLEF5D0N10GN1 Key Specifications

Source: manufacturer datasheet
VDS100 V
ID147 A
RDS(on)3.8 mΩ

Technical Documents

1 document

Datasheet

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