NTMT170N70GN1

ActiveSiC / GaN Wide-BandgapVDS 700 VID 12 ARDS(on) 132 mΩ

Enhancement Mode Gallium Nitride (GaN) HEMT 700 V, 132 mΩ, 12 A, PTFP‐N9 (DFN)

Manufacturer
onsemi
Datasheet
9 pages · 311 KB

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NTMT170N70GN1 Key Specifications

Source: manufacturer datasheet
VDS700 V
ID12 A
RDS(on)132 mΩ

Technical Documents

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