Skip to main content

NTT2012N065M3S

ActiveSiC / GaN Wide-BandgapRDS(on) 12.7 mΩ

Silicon Carbide (SiC) MOSFET – EliteSiC, 12.7 mohm, 650 V, M3S, T2PAK

Manufacturer: onsemi
Datasheet: 10 pages · 179 KB
Website: www.onsemi.com

Wrong information or a copyright issue? Let us know

NTT2012N065M3S Key Specifications

Source: manufacturer datasheet

RDS(on)	12.7 mΩ

Technical Documents

1 document

Datasheet

NTT2012N065M3S - Silicon Carbide (SiC) MOSFET – EliteSiC, 12.7 mohm, 650 V, M3S, T2PAK
10 pages179 KBONSEMI-NTT2012N065M3S.pdf

Alternatives

0 parts

No alternatives listed for NTT2012N065M3S yet.

Where to buy

Prices and stock are set by each distributor

Same Series

None

More from onsemi

NTT2016N065M3SSilicon Carbide (SiC) MOSFET
NTT2023N065M3SSilicon Carbide (SiC) MOSFET
NTT2032N065M3SSilicon Carbide (SiC) MOSFET
NVBG015N065SC1Silicon Carbide (SiC) MOSFET – 12 mohm, 650 V, M2, D2PAK-7L
NVBG020N090SC1Silicon Carbide (SiC) MOSFET – 20 mohm, 900 V, M2, D2PAK-7L
NVBG022N120M3SSilicon Carbide (SiC) MOSFET
NVBG023N065M3SSilicon Carbide (SiC) MOSFET
NVBG025N065SC1MOSFET - SiC Power, Single N-Channel, D2PAK-7L
NVBG030N120M3SSilicon Carbide (SiC) MOSFET
NVBG032N065M3SSilicon Carbide (SiC) MOSFET - EliteSiC, 32 mohm, 650 V, M3S, D2PAK-7L
NVBG040N120M3SSilicon Carbide (SiC) MOSFET
NVBG040N120SC1Silicon Carbide (SiC) MOSFET – 40 mohm, 1200 V, M1, D2PAK-7L

Order codes / Aliases

NTT2012N065M3