Skip to main content

NVBG025N065SC1

ActiveSiC / GaN Wide-Bandgap封装 D2PAK

MOSFET - SiC Power, Single N-Channel, D2PAK-7L

Manufacturer: onsemi
Package: D2PAK
Datasheet: 8 pages · 217 KB
Website: www.onsemi.com

Wrong information or a copyright issue? Let us know

NVBG025N065SC1 Key Specifications

Source: manufacturer datasheet

封装	D2PAK

Technical Documents

1 document

Datasheet

NVBG025N065SC1 - MOSFET - SiC Power, Single N-Channel, D2PAK-7L
8 pages217 KBONSEMI-NVBG025N065SC1.pdf

Alternatives

0 parts

No alternatives listed for NVBG025N065SC1 yet.

Where to buy

Prices and stock are set by each distributor

Same Series

None

More from onsemi

NVT2012N065M2MOSFET - SiC Power, Single N-Channel, T2PAK
NCP58920Enhanced Mode GaN Power Switch with Integrated Driver 650 V, 150 mΩ, 11 A, TQFN26
NCP58921Enhanced Mode GaN Power Switch with Integrated Driver 650 V, 50 mΩ, 30 A, TQFN26
NCP58922Enhanced Mode GaN Power Switch with Integrated Driver 650 V, 78 mΩ, 18 A, TQFN26
NCP58933ABTEnhancement Mode GaN Power Switch with Integrated Gate Clamp and Protection
NCP58934ABLEnhancement Mode GaN Power Switch with Integrated Gate Clamp and Protection 650 V, 27 mΩ, PDSO‐F9
NCP58935ABT.revP1
NDC10170ASilicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1700 V, D1, Die
NDC25170ASilicon Carbide (SiC) Schottky Diode – EliteSiC, 25 A, 1700 V, D1, Die
NDSH10120CSilicon Carbide (SiC) Schottky Diode - EliteSiC, 10 A, 1200 V, D3, TO-247-2L
NDSH10120C-F155Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10 A, 1200 V, D3, TO-247-2L
NDSH10170ASilicon Carbide (SiC) Schottky Diode – EliteSiC, 10 A, 1700 V, D1, TO-247-2L