NTLEF0D7N04GN1
ActiveSiC / GaN Wide-BandgapVDS 40 VID 819 ARDS(on) 0.5 mΩ
Enhancement Mode Gallium Nitride (GaN) HEMT 40 V, 0.5 mOhm, 819 A, PDSO‐N8 5.0x6.0
- Manufacturer
- onsemi
- Datasheet
- 8 pages · 1.2 MB
- Website
- www.onsemi.com
NTLEF0D7N04GN1 Key Specifications
Source: manufacturer datasheet| VDS | 40 V |
|---|---|
| ID | 819 A |
| RDS(on) | 0.5 mΩ |
Technical Documents
1 documentDatasheet
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