NTLEF0D7N04GN1

ActiveSiC / GaN Wide-BandgapVDS 40 VID 819 ARDS(on) 0.5 mΩ

Enhancement Mode Gallium Nitride (GaN) HEMT 40 V, 0.5 mOhm, 819 A, PDSO‐N8 5.0x6.0

Manufacturer
onsemi
Datasheet
8 pages · 1.2 MB

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NTLEF0D7N04GN1 Key Specifications

Source: manufacturer datasheet
VDS40 V
ID819 A
RDS(on)0.5 mΩ

Technical Documents

1 document

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