NTLEF1D0N10GN1

ActiveSiC / GaN Wide-BandgapRDS(on) 0.8 mΩ

Enhancement Mode Gallium Nitride (GaN) HEMT 100 V, 0.8 mOhm, TBD A, PDSO‐N8

Manufacturer
onsemi
Datasheet
7 pages · 834 KB

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NTLEF1D0N10GN1 Key Specifications

Source: manufacturer datasheet
RDS(on)0.8 mΩ

Technical Documents

1 document

Datasheet

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