NTLEF2D5N10GN1

ActiveSiC / GaN Wide-BandgapVDS 100 VID 275 ARDS(on) 1.9 mΩ

Enhancement Mode Gallium Nitride (GaN) HEMT 100 V, 1.9 mOhm, 275 A, PDSO‐N8 5.0x6.0

Manufacturer
onsemi
Datasheet
6 pages · 275 KB

Wrong information or a copyright issue? Let us know

NTLEF2D5N10GN1 Key Specifications

Source: manufacturer datasheet
VDS100 V
ID275 A
RDS(on)1.9 mΩ

Technical Documents

1 document

Datasheet

Alternatives

0 parts
No alternatives listed for NTLEF2D5N10GN1 yet.