“W” 共 429 个型号· 679 ms

排序相关度热度型号 A-Z
AEC-Q101 清除筛选
  • GWA40MS120DF4AG车规级AEC-Q101

    Automotive-grade trench gate field-stop, 1200 V, 40 A, low-loss MS series IGBT in a TO-247 long leads package

    厂商 意法半导体封装 TO-247VDS 1200 VID 40 A
    1 份文档
  • GWA40MS120DLAG车规级AEC-Q101

    Automotive-grade trench gate field-stop, 1200 V, 40 A, low-loss MS series IGBT and ultra-low reverse losses in a TO-247 long leads package

    厂商 意法半导体封装 TO-247VDS 1200 VID 40 A
    1 份文档
  • GWA40MS120F4AG车规级AEC-Q101

    Automotive-grade trench gate field-stop, 1200 V, 40 A, low-loss MS series IGBT in a TO-247 long leads package

    厂商 意法半导体封装 TO-247VDS 1200 VID 40 A
    1 份文档
  • GWA75H65DRFB2AG车规级AEC-Q101

    Automotive-grade trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO‑247 long leads package

    厂商 意法半导体封装 TO-247VDS 650 VID 75 A
    1 份文档
  • ECMF04-4HSWM10Y车规级AEC-Q101

    Automotive common mode filter with ESD protection

    厂商 意法半导体
    1 份文档
  • SCT012W90G3-4AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 900 V, 12 mΩ typ., 110 A in an HiP247-4 package

    厂商 意法半导体VDS 900 VID 110 A
    1 份文档
  • SCT012W90G3AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 900 V, 12 mΩ typ., 110 A in an HiP247 package

    厂商 意法半导体VDS 900 VID 110 A
    1 份文档
  • SCT015W120G3-4AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mΩ typ., 129 A in an HiP247-4 package

    厂商 意法半导体VDS 1200 VID 129 A
    1 份文档
  • SCT018W65G3-4AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 650 V, 20 mΩ typ., 55 A in an HiP247-4 package

    厂商 意法半导体VDS 650 VID 55 A
    1 份文档
  • SCT018W65G3AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 650 V, 20 mΩ typ., 55 A in an HiP247 package

    厂商 意法半导体VDS 650 VID 55 A
    1 份文档
  • SCT019W120G3-4AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mΩ typ., 90 A in an HiP247-4 package

    厂商 意法半导体VDS 1200 VID 90 A
    1 份文档
  • SCT020W120G3-4AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mΩ typ., 100 A in an HiP247-4 package

    厂商 意法半导体VDS 1200 VID 100 A
    1 份文档
  • SCT025W120G3-4AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 56 A in an HiP247-4 package

    厂商 意法半导体VDS 1200 VID 56 A
    1 份文档
  • SCT025W120G3AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mΩ typ., 56 A in an HiP247 package

    厂商 意法半导体VDS 1200 VID 56 A
    1 份文档
  • SCT027W65G3-4AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 650 V, 29 mΩ typ., 60 A in an HiP247-4 package

    厂商 意法半导体VDS 650 VID 60 A
    1 份文档
  • SCT040W120G3-4AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an HiP247-4 package

    厂商 意法半导体VDS 1200 VID 40 A
    1 份文档
  • SCT040W120G3AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an HiP247 package

    厂商 意法半导体VDS 1200 VID 40 A
    1 份文档
  • SCT040W65G3-4AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 650 V, 45 mΩ typ., 30 A in an HiP247-4 package

    厂商 意法半导体VDS 650 VID 30 A
    1 份文档
  • SCT040W65G3AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 650 V, 45 mΩ typ., 30 A in an HiP247 package

    厂商 意法半导体VDS 650 VID 30 A
    1 份文档
  • SCT045W17KAG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 1700 V, 55 mΩ typ., 48 A in an HiP247 package

    厂商 意法半导体VDS 1700 VID 48 A
    1 份文档