SCT027W65G3-4AG

量产SiC / GaN 宽禁带器件VDS 650 VID 60 ARDS(on) 29 mΩ

Automotive-grade silicon carbide Power MOSFET 650 V, 29 mΩ typ., 60 A in an HiP247-4 package

SCT027W65G3-4AG 主要参数

来源：原厂数据手册

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SCT027W65G34SCT027W65G34A