“S” 共 5,899 个型号· 132 ms

排序相关度热度型号 A-Z
分立器件 传感器 清除筛选
  • STB12NK80Z-S已停产

    N-channel 800V - 0.65 - 10.5A I²SPAK Zener-protected superMESH™ Power MOSFET

    厂商 意法半导体VDS 800 VID 10.5 A
    1 份文档
  • STB16NK65Z-S已停产

    N-channel 650V - 0.38Ω- 13A TO-220 / I²SPAK Zener -protected SuperMESH™ MOSFET

    厂商 意法半导体封装 TO-220VDS 650 VID 13 A
    1 份文档
  • STP18N55M5

    N-channel 550 V, 150 mΩ typ., 16 A MDmesh M5 Power MOSFET in a TO-220 package

    厂商 意法半导体封装 TO-220VDS 550 VID 16 A
    1 份文档
  • SHT4x

    厂商 盛思锐
    1 份文档
  • SHTC3

    厂商 盛思锐
    1 份文档
  • SCT011H75G3AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mΩ typ., 110 A in an H²PAK-7 package

    厂商 意法半导体VDS 750 VID 110 A
    1 份文档
  • SCT011HU75G3AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mΩ typ., 110 A in an HU3PAK package

    厂商 意法半导体VDS 750 VID 110 A
    1 份文档
  • SCT012H90G3AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 900 V, 12 mΩ typ., 110 A in an H²PAK-7 package

    厂商 意法半导体VDS 900 VID 110 A
    1 份文档
  • SCT012W90G3-4AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 900 V, 12 mΩ typ., 110 A in an HiP247-4 package

    厂商 意法半导体VDS 900 VID 110 A
    1 份文档
  • SCT012W90G3AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 900 V, 12 mΩ typ., 110 A in an HiP247 package

    厂商 意法半导体VDS 900 VID 110 A
    1 份文档
  • SCT014HU65G3AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 650 V, 13.5 mΩ typ., 110 A in an HU3PAK package

    厂商 意法半导体VDS 650 VID 110 A
    1 份文档
  • SCT014TO65G3

    Silicon carbide Power MOSFET 650 V, 13.5 mΩ typ., 110 A in a TO-LL package

    厂商 意法半导体VDS 650 VID 110 A
    1 份文档
  • SCT015W120G3-4

    Silicon carbide Power MOSFET 1200 V, 15 mΩ typ., 129 A in an HiP247-4 package

    厂商 意法半导体VDS 1200 VID 129 A
    1 份文档
  • SCT015W120G3-4AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mΩ typ., 129 A in an HiP247-4 package

    厂商 意法半导体VDS 1200 VID 129 A
    1 份文档
  • SCT016H120G3AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mΩ typ., 112 A in an H²PAK-7 package

    厂商 意法半导体VDS 1200 VID 112 A
    1 份文档
  • SCT018H65G3-7

    Silicon carbide Power MOSFET 650 V, 20 mΩ typ., 55 A in an H²PAK-7 package

    厂商 意法半导体VDS 650 VID 55 A
    1 份文档
  • SCT018H65G3AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 650 V, 20 mΩ typ., 55 A in an H²PAK-7 package

    厂商 意法半导体VDS 650 VID 55 A
    1 份文档
  • SCT018HU65G3AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 650 V, 21.5 mΩ typ., 60 A in an HU3PAK package

    厂商 意法半导体VDS 650 VID 60 A
    1 份文档
  • SCT018W65G3-4AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 650 V, 20 mΩ typ., 55 A in an HiP247-4 package

    厂商 意法半导体VDS 650 VID 55 A
    1 份文档
  • SCT018W65G3AG车规级AEC-Q101

    Automotive-grade silicon carbide Power MOSFET 650 V, 20 mΩ typ., 55 A in an HiP247 package

    厂商 意法半导体VDS 650 VID 55 A
    1 份文档