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STPSC30G065L2Y

ActiveSiC / GaN Wide-Bandgap工作温度 -55 ~ 175 °CVDS 650 VID 30 A

Automotive 650 V, 30 A high surge silicon carbide power Schottky diode

Manufacturer: STMicroelectronics
Datasheet: 11 pages · 562 KB
Website: www.st.com

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STPSC30G065L2Y Key Specifications

Source: manufacturer datasheet

工作温度	-55 ~ 175 °C
VDS	650 V
ID	30 A

Technical Documents

1 document

Datasheet

Datasheet - STPSC30G065L2Y - Automotive 650 V, 30 A high surge silicon carbide power Schottky diode
11 pages562 KB BookmarkedST-STPSC30G065L2Y.pdf

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Same Series

STPSC30G065650 V, 30 A high surge silicon carbide power Schottky diode
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STPSC30G065-YAutomotive 650 V, 30 A high surge silicon carbide power Schottky diode

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Order codes / Aliases

STPSC30G065L2