STPSC30G065
ActiveSiC / GaN Wide-Bandgap工作温度 -55 ~ 175 °CVDS 650 VID 30 A封装 DO-247
650 V, 30 A high surge silicon carbide power Schottky diode
- Manufacturer
- STMicroelectronics
- Package
- DO-247
- Datasheet
- 10 pages · 654 KB
- Website
- www.st.com
STPSC30G065 Key Specifications
Source: manufacturer datasheet| 工作温度 | -55 ~ 175 °C |
|---|---|
| VDS | 650 V |
| ID | 30 A |
| 封装 | DO-247 |
Technical Documents
1 documentDatasheet
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