NXH004P120M3F2PTNG

UnknownSiC / GaN Wide-BandgapRDS(on) 4 mΩ

Silicon Carbide (SiC) Module - EliteSiC, 4 mohm SiC M3 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package with Si3N4 DBC

Manufacturer
onsemi
Datasheet
13 pages · 2.4 MB · Rev. 2

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NXH004P120M3F2PTNG Key Specifications

Source: manufacturer datasheet
RDS(on)4 mΩ

Technical Documents

1 document

Datasheet

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