NXH006P120M3F2

ActiveSiC / GaN Wide-BandgapRDS(on) 6 mΩ

Silicon Carbide (SiC) Module ‐ EliteSiC, 6 mohm, 1200 V, SiC M3 MOSFET, 2‐PACK Half Bridge Topology, F2 Package with HPS DBC

Manufacturer
onsemi
Datasheet
12 pages · 688 KB

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NXH006P120M3F2 Key Specifications

Source: manufacturer datasheet
RDS(on)6 mΩ

Technical Documents

1 document

Datasheet

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