NXH003P120M3F2PTNG

UnknownSiC / GaN Wide-BandgapRDS(on) 3 mΩ

Silicon Carbide (SiC) Module - EliteSiC, 3 mohm SiC M3 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package with Si3N4 DBC

Manufacturer
onsemi
Datasheet
14 pages · 2.2 MB · Rev. 4

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NXH003P120M3F2PTNG Key Specifications

Source: manufacturer datasheet
RDS(on)3 mΩ

Technical Documents

1 document

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