NXH003P120M3F2PTHG
ActiveSiC / GaN Wide-BandgapRDS(on) 3 mΩ
Silicon Carbide (SiC) Module - EliteSiC, 3 mohm SiC M3 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package with HPS DBC
- Manufacturer
- onsemi
- Datasheet
- 14 pages · 2.1 MB
- Website
- www.onsemi.com
NXH003P120M3F2PTHG Key Specifications
Source: manufacturer datasheet| RDS(on) | 3 mΩ |
|---|
Technical Documents
1 documentDatasheet
Alternatives
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