SiC / GaN Wide-Bandgap

651 parts

207 parts· 3 ms

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  • STGWA60V60DWFAGAutomotiveAEC-Q101

    Automotive-grade trench gate field-stop 600 V, 60 A very high speed V series IGBT featuring freewheeling SiC diode

    Manufacturers STMicroelectronicsPackage TO-247VDS 600 VID 60 A
    1 document
  • STPSC10H12CIndustrial

    1200 V power Schottky silicon carbide diode

    Manufacturers STMicroelectronicsPackage TO-247工作温度 -40 ~ 175 °C封装 TO-247
    1 document
  • STPSC16H065AIndustrial

    650 V power Schottky silicon carbide rectifier

    Manufacturers STMicroelectronicsPackage TO-247工作温度 -40 ~ 175 °C封装 TO-247
    1 document
  • STPSC20065CIndustrial

    650 V, dual 10 A, power Schottky silicon carbide diode

    Manufacturers STMicroelectronicsPackage TO-247工作温度 -40 ~ 175 °CVDS 650 V
    1 document
  • STPSC2006CW

    600 V power Schottky silicon carbide diode

    Manufacturers STMicroelectronicsPackage TO-247封装 TO-247
    1 document
  • STPSC20H065C-YAutomotiveAEC-Q101

    Automotive 650 V power Schottky silicon carbide diode

    Manufacturers STMicroelectronicsPackage TO-220AB封装 TO-220AB
    1 document
  • STPSC20H065C

    650 V power Schottky silicon carbide diode

    Manufacturers STMicroelectronicsPackage TO-220AB封装 TO-220AB
    1 document
  • STPSC20H065CWLYAutomotiveAEC-Q101

    Automotive 20 A 650 V power Schottky silicon carbide diode

    Manufacturers STMicroelectronicsPackage TO-247工作温度 -40 ~ 175 °C封装 TO-247
    1 document
  • STPSC20H12Industrial

    1200 V, 20 A power Schottky silicon carbide diode

    Manufacturers STMicroelectronicsPackage TO-247工作温度 -40 ~ 175 °CVDS 1200 V
    1 document
  • STPSC20H12CIndustrial

    1200 V power Schottky silicon carbide diode

    Manufacturers STMicroelectronicsPackage TO-247工作温度 -40 ~ 175 °C封装 TO-247
    1 document
  • STPSC20H12CWYAutomotiveAEC-Q101

    20 A 1200 V power Schottky silicon carbide diode

    Manufacturers STMicroelectronicsPackage TO-247工作温度 -40 ~ 175 °C封装 TO-247
    1 document
  • STPSC30H12CIndustrial

    1200 V power Schottky silicon carbide diode

    Manufacturers STMicroelectronicsPackage TO-247工作温度 -40 ~ 175 °C封装 TO-247
    1 document
  • STPSC31H12C-YAutomotiveAEC-Q101

    2 X 15 A, 1200 V power Schottky silicon carbide diode

    Manufacturers STMicroelectronicsPackage TO-247工作温度 -40 ~ 175 °C封装 TO-247
    1 document
  • STPSC40065C-YAutomotiveAEC-Q101

    Automotive 650 V power Schottky silicon carbide diode

    Manufacturers STMicroelectronicsPackage TO-247工作温度 -40 ~ 175 °C封装 TO-247
    1 document
  • STPSC40065C

    650 V power Schottky silicon carbide diode

    Manufacturers STMicroelectronicsPackage TO-247封装 TO-247
    1 document
  • STPSC40H12C-YAutomotiveAEC-Q101

    40 A 1200 V power Schottky silicon carbide diode

    Manufacturers STMicroelectronicsPackage TO-247工作温度 -40 ~ 175 °C封装 TO-247
    1 document
  • STPSC40H12CIndustrial

    1200 V, 40 A power Schottky silicon carbide diode

    Manufacturers STMicroelectronicsPackage TO-247工作温度 -40 ~ 175 °CVDS 1200 V
    1 document
  • STPSC8H065C

    650 V power Schottky silicon carbide diode

    Manufacturers STMicroelectronicsPackage TO-220AB封装 TO-220AB
    1 document
  • NCV51705Automotive

    Single 6 A High-Speed, Low-Side SiC MOSFET Driver

    Manufacturers onsemiPackage QFN24封装 QFN24
    1 document
  • NDSH10120C

    Silicon Carbide (SiC) Schottky Diode - EliteSiC, 10 A, 1200 V, D3, TO-247-2L

    Manufacturers onsemiPackage TO-247封装 TO-247
    1 document